Reactive ion etching of silicon using low-power plasma etcher
نویسندگان
چکیده
منابع مشابه
Selective reactive ion etching of silicon nitride over silicon using CHF3 with N2 addition
In this article the effects of process parameters of CHF31N2 plasma etching chemistry ~rf power 50–70 W, pressure 22.5–52.5 mTorr, and N2 content 0%–95%! and mask materials ~photoresist, aluminum, and silicon nitride! on the etching selectivity of silicon nitride over polysilicon are investigated. It was found that the selectivity increased with the N2 content in the range of 0%–85% and then de...
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Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications Prakash N. K. Deenapanray1*,y, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber and A. W. Blakers Centre for Sustainable Energy Systems, FEIT, The Australian National University, Canberra ACT 0200, Australia Department of Engineering, FEIT, The Australian National University, ...
متن کاملReactive ion etching of GaN using WI3
Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...
متن کاملThe black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control
Very deep trenches (up to 200 pm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SFd02/CHF3). Isotropic, positively and negatively (i.e. reverse) tapered as well as.fully vertical walls with smooth suriaces are achieved by controlling the plasma chemistry. A convenient way to find the processing conditions needed for a vertical wall is descr...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2016
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/748/1/012017